01 ago - Milano
Ferroelectric Memory
Ferroelectric Memory is seeking an experienced IC Design Engineer with strong CMOS analog/mixed-signal expertise and a focus on emerging NVM devices to help develop next-generation ferroelectric memory products based on hafnium oxide.
Per essere preso/a in considerazione per un colloquio, la preghiamo di assicurarsi che la sua candidatura sia pienamente in linea con le specifiche del lavoro riportate di seguito.
You will collaborate with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon, xlwpduy and work closely with layout engineers on verification, debugging and post-silicon activities.
#J-18808-Ljbffr
09 ago - San Marco Evangelista
Idroclima Service di Pastore Alessandro
09 ago - Fossombrone
Tim Kollmann
09 ago - Livorno
Cristina
09 ago - Trieste
giuseppina