07 ago - Milano
Ferroelectric Memory
Ferroelectric Memory is seeking an experienced IC Design Engineer with strong CMOS analog/mixed-signal expertise and a focus on emerging NVM devices to help develop next-generation ferroelectric memory products based on hafnium oxide. You will collaborate with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon, and work closely with layout engineers on verification, debugging and post-silicon activities. #J-*****-Ljbffr
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