Process Engineer
Pubblicato il 12-08-2026 - Ephos in Milano
Ephos is building vertically integrated, advanced packaging solutions on glass panels. We transform raw glass into electronic and optically active substrates for die-to-die connectivity, manufactured entirely within our own facilities. Our systems are built for companies developing AI accelerators, including hyperscalers and top-tier chip designers.
Non aspetti a candidarsi dopo aver letto questa descrizione: per questa possibilità è previsto un elevato volume di candidature.
We have already delivered products to leading global firms, and we are currently building a new fabrication facility to scale production by 100x. This expansion is backed by a $50M EU CHIPS Act grant—the first ever awarded to a startup.
The role
We are seeking a Process Engineer specializing in glass panel manufacturing to join our Process team. In this role, your primary focus will be owning, optimizing, and scaling our glass etching processes (wet/chemical, dry, or laser). You will bridge the gap between R&D; and mass production, ensuring our glass panels meet strict optical, structural,
and cosmetic standards while maximizing yield and throughput.
Your responsibilities
-
- Lead the development, qualification, and continuous improvement of glass etching processes to meet precise dimensional and surface specifications.
- Monitor process performance using Statistical Process Control (SPC). Identify root causes of defects (e.g., uneven etching, micro-cracks, contamination) and implement robust corrective actions.
- Partner with equipment and chemical vendors to optimize etching baths, spray systems, or plasma/laser parameters. Manage chemical concentrations, flow rates, and temperature controls.
- Characterize new glass materials and etching chemistries through rigorous DoE to improve process windows and reduce cycle times.
- Maintain strict adherence to environmental and safety protocols, particularly regarding the handling, recycling, and disposal of hazardous etching chemicals (e.g., HF, s
