Design/Senior Design Engineer – NAND Core

12 ago - Avezzano
1460 Micron Semiconductor Ital

Position OverviewAs a Design Engineer in the NVE Design Engineering Core group at Micron Semiconductor Italia, you will contribute to the development of memory products that are best‑in‑class, using your specialized knowledge and Micron proprietary methods of designing and analyzing core and mixed circuits used in the development of memory products.

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Responsibilities
- Design, simulate, and optimize NAND core circuit blocks, balancing performance, power, area, and reliability trade‑offs.
- Translate product and system requirements into circuit implementations, evaluating feasibility and functionality across use cases.
- Perform comprehensive circuit verification (DC, AC, transient, noise, Monte Carlo, PVT corners) at block and chip level.
- Collaborate with cross‑functional teams to improve power efficiency, manufacturability, and overall product performance.
- Develop and leverage automation solutions (e.g., Python‑based workflows,



AI‑assisted tools) and maintain technical documentation.

Minimum Qualifications
- M.S. or Ph.D. in Electrical Engineering, Electronics, or a related field.
- Proven experience in analog and/or mixed‑signal CMOS circuit design.
- Solid understanding of device physics, variability, reliability, and power integrity.
- Hands‑on experience with SPICE‑based simulation tools and circuit verification methodologies.
- Strong problem‑solving and communication skills, with ability to work in global cross‑functional teams.

Preferred Qualifications
- Experience in NAND Flash or other non‑volatile memory technologies.
- Familiarity with design automation, scripting (e.g., Python), or AI‑assisted design approaches.
- Understanding of layout constraints and interaction with physical design flows.

Salary & BenefitsBase salary range: 34,000.00€–57,000.00€ per year, with B2 CCNL Level.
Remuneration package

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