Engineer, Design

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Design/Senior Design Engineer – NAND datapath (NVE Engineering)
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence. The Non‑Volatile NAND Design Engineering group designs and optimises analog, digital and mixed‑signal circuits for advanced NAND Flash memory products.
Position Overview
As a Design Engineer in the NVE Design Engineering Datapath group at Micron Semiconductor Italia, you will contribute to the development of best‑in‑class NAND Flash memory products, focusing on datapath architectures and high‑speed interfaces. You will design, optimise and validate NAND datapath logic and DDR high‑speed interfaces, working at block and sub‑system level and contributing to full‑chip integration.
Responsibilities
- Design and optimise high‑speed datapath and interface circuits, ensuring timing closure and performance at block and sub‑system level.
- Translate system and interface requirements into circuit architectures and transistor‑level implementations, balancing performance, power,



and area.
- Perform functional, timing and signal integrity verification using advanced simulation methodologies (including PVT and corner analysis).
- Collaborate with cross‑functional teams to ensure proper floorplan integration, manufacturability and alignment with product specifications.
- Develop and apply automation solutions (e.g., scripting, AI‑assisted methodologies) and support silicon validation, debug and documentation.

Minimum Qualifications
- M.S. or Ph.D. in Electrical Engineering, Electronics or a related field.
- Strong knowledge of high‑speed digital, analog and mixed‑signal CMOS circuit design.
- Solid understanding of timing, signal integrity, noise, variability and deep‑submicron device effects.
- Hands‑on experience with industry‑standard simulation tools (e.g., SPICE, mixed‑signal, RTL/Verilog‑based flows).
- Strong problem‑solving and communication skills and ability to

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