Engineer, Design

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Department Introduction The Non‑Volatile NAND Design Engineering group is responsible for the design and optimization of analog, digital and mixed‑signal circuits enabling advanced NAND Flash memory products. Close collaboration with teams from multiple functions ensures scalable, manufacturable, and reliable solutions across technology nodes. Come and join us
Position Overview
As a Sr. Design Engineer in the NVE Design Engineering Analog group at Micron Semiconductor Italia, you will contribute to the development of memory products that are best‑in‑class, using your specialized knowledge and Micron proprietary methods of designing and analyzing core and mixed circuits used in the development of memory products.
Responsibilities
- Design, implement, and validate analog and mixed‑signal circuits (e.g., charge pumps, regulators, amplifiers, ADC/DAC, bandgap, power management blocks) across the full development lifecycle.
- Translate system requirements into circuit architectures, specifications, and transistor‑level implementations optimized for performance, power, area, noise,



and reliability.
- Perform comprehensive circuit simulation and verification (DC, AC, transient, noise, Monte Carlo, PVT corners) including parasitic‑aware validation.
- Collaborate with multi‑functional teams to optimize product performance, power consumption, die size, and manufacturability.
- Develop user documentation and contribute to build reviews, silicon validation, and root‑cause analysis activities.

Min Qualifications
- M.S. or Ph.D. in Electrical Engineering, Electronics, or a related field.
- Proven experience in analog and mixed‑signal CMOS circuit design.
- Solid understanding of device physics, variability, noise, reliability, and power integrity.
- Hands‑on experience with SPICE‑based simulation tools and verification methodologies.
- Strong problem‑solving and communication skills, with ability to work in global cross‑functional teams.

Preferred Qualifications
- Experience in

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