03 set - L'Aquila
Micron Technology
Department Introduction
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The Non-Volatile NAND Design Engineering group is responsible for the design and optimization of analog, digital and mixed-signal circuits enabling advanced NAND Flash memory products. Close collaboration with cross-functional teams ensures scalable, manufacturable, and reliable solutions across technology nodes.
Position Overview
As a Design Engineer in the NVE Design Engineering Core group at Micron Semiconductor Italia, you will contribute to the development of memory products that are best-in-class, using your specialized knowledge and Micron proprietary methods of designing and analyzing core and mixed circuits used in the development of memory products.
Responsibilities
- Design, simulate, and optimize NAND core circuit blocks, balancing performance, power, area, and reliability trade-offs.
- Translate product and system requirements into circuit implementations,
evaluating feasibility and functionality across use cases.
- Perform comprehensive circuit verification (DC, AC, transient, noise, Monte Carlo, PVT corners) at block and chip level.
- Collaborate with cross-functional teams to improve power efficiency, manufacturability, and overall product performance.
- Develop and maintain automation solutions (e.g., Python-based workflows, AI-assisted tools) and technical documentation.
Minimum Qualifications
- M.S. or Ph.D. in Electrical Engineering, Electronics, or a related field.
- Proven experience in analog and/or mixed-signal CMOS circuit design.
- Solid understanding of device physics, variability, reliability, and power integrity.
- Hands‐on experience with SPICE-based simulation tools and circuit verification methodologies.
- Strong problem‐solving and communication skills, with ability to work in global cross‐functional teams.
Preferred Qualifications
- Experience in NAND Flash or oth
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