Advanced Research Power Device

09 set - Catania
Stmicroelectronics

OUR STORY

At ST, we believe in the power of technology to drive innovation and make a positive impact on people, business, and society. We are a global semiconductor company, and our advanced technology & chips forms the hidden part of the world we live in today.

When you join ST, you will be part of a global business of more than 115+ nationalities and present in 40 countries, 50,000+, diverse and dedicated creators & makers of technology around the world

Developing technologies takes more than talent: it takes amazing people who understands collaboration and respect. People with passion and desire to disrupt the status quo, push boundaries and drive innovation - whilst unlocking your own potential.

Working at ST means innovating for a future that we want to make smarter, greener, in a responsible and sustainable way. Our technology starts with you. Join us and start the future

YOUR ROLE

We are seeking a motivated R&D; Intern to join our microelectronics team, focusing on the study of dielectric reliability in advanced power semiconductor devices.



The internship will provide hands-on experience with materials characterization, reliability testing, and data analysis to support the development of next-generation technologies.

He/She will be involved in the following activities:
- Conduct literature research and experiments to evaluate the electrical and physical reliability of dielectric materials
- Assist in the setup and execution of stress tests (TDDB, BTI, etc.)
- Analyze test data to identify failure mechanisms and reliability trends
- Collaborate with R&D; engineers and materials scientists on ongoing research projects
- Document findings and present results in internal reports or meetings
- Exposure to real-world challenges in microelectronics R&D;
- Experience with lab tools (e.g., probe stations, parameter analyzers) is a plus
- Training in advanced reliability testing techniques
- Opportunity to contribute to the development of cutting-edge semiconducto

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