NAND Datapath Design Engineer — High-Speed DDR

03 ott - Avezzano
1460 Micron Semiconductor Ital

Micron Semiconductor Italia is seeking a Design Engineer in the NVE Design Engineering Datapath group to contribute to high‑speed NAND datapath architectures and DDR interfaces. You will design, optimize, and validate datapath circuits at block and sub‑system levels, ensuring timing closure and performance in CMOS technologies.

Requires MS/PhD in EE and strong background in high‑speed CMOS design, timing, and SI, with experience in SPICE and RTL/Verilog flows.

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