Internship - Intrinsic Capacitance Measurement of Power MOSFETs/IGBTs Using S‑Parameters
Pubblicato il 04-10-2026 - Strategic Micro Systems of NJ in Italia
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You will support test improvement activities related to the high‑frequency characterization of power MOSFETs and IGBTs.
The objective is to set up and optimize a measurement system for intrinsic device capacitances by exploiting S‑parameters, and to conduct a systematic study versus measurement frequency.
Main Responsibilities
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- Contribute to the setup, calibration and optimization of a measurement bench for S‑parameter characterization of power devices (e.g. using a Vector Network Analyzer).
- Measure S‑parameters of power MOSFETs/IGBTs and extract intrinsic capacitances (e.g. input, output, reverse transfer capacitances), taking into account package and fixture effects.
- Investigate the frequency dependence of the extracted capacitances and evaluate the validity limits of low‑frequency vs high‑frequency models.
- Analyze the impact of measurement conditions (biasing, fixture, de‑embedding, calibration) on the accuracy and repeatability of the extracted parameters.
- Apply basic statistical analysis to assess measurement dispersion and uncertainty.
- Compare measurement resul