Design Engineer
Pubblicato il 04-10-2026 - MICRON in L'Aquila
Overview
As a Design Engineer in Micron’s NVE Datapath group, you will shape datapath architectures and high‑speed interfaces for leading NAND Flash products. You’ll translate requirements into optimized circuit implementations and participate in full‑chip integration. This role emphasizes timing, signal integrity, and power optimization across block and sub‑system levels. You’ll work with cross‑functional teams to ensure manufacturability and alignment with product specs, while applying automation and AI‑assisted approaches to silicon validation and debugging. This is a growth opportunity at the intersection of advanced digital, analog, and mixed‑signal design in memory technology.
Retribuzione / Benefits meal vouchers
corporate welfare
remote working days
supplementary health insurance
life coverage
Employee Assistance Program
Responsabilità Design and optimize high-speed datapath and interface circuits to meet timing and performance targets
Translate system requirements into circuit architectures and transistor‑level implementations with balance of performance, power, and area
Perform functional, timing, and signal integrity verification using advanced simulations (PVT and corner analysis)
Collaborate with cross-functional teams for floorplanning, manufacturability, and specification alignment
Develop and apply automation solutions (e.g., scripting, AI‑assisted methods) and support silicon validation and debugging
Requisiti fondamentali MS in Electrical Engineering or related field (PhD preferred but not required)
Strong knowledge of high‑speed digital, analog, and mixed‑signal CMOS design
Solid understanding of timing, signal integrity, noise, variability, and sub‑micron effects
Experience with industry tools (SPICE, mixed‑signal, RTL/Verilog flows)
Strong problem‑solving and communication skills in dynamic, multi‑functional environments
collaborative
clear communication
adaptability
high‑speed CMOS circuit design
timing and signal integrity verification
PVT and