09 ott - Agrate Brianza
GOhiring
Role OverviewWe are looking for an experienced IC Design Engineer (m/f/d) with strong expertise in CMOS analog/mixed‑signal design and emerging NVM devices to help develop FMC’s next‑generation ferroelectric memory products based on hafnium oxide technology. You will work in close collaboration with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon.
Must HaveCMOS IC design (Analog/Mixed Signal), NVM
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