10 ott - Catania
Stmicroelectronics
OUR STORY
At STMicroelectronics, we believe in the power of technology to drive innovation and make a positive impact on people, businesses, and society. As a global semiconductor company, our advanced technologies and chips form the hidden foundation of the world we live in today.
When you join ST, you will be part of a global business with more than 115 nationalities, present in 40 countries, and comprising over 50,000 diverse and dedicated creators and makers of technology around the world.
Developing technologies takes more than talent: it takes amazing people who understand collaboration and respect. People with passion and the desire to disrupt the status quo, drive innovation, and unlock their own potential.
Embark on a journey with us, where you can innovate for a future that we want to make smarter and greener, in a responsible and sustainable way. Our technology starts with you.
Job Purpose
Contribute to the development of advanced high-voltage SiC MOSFET technologies by designing innovative device architectures that improve performance, robustness, reliability,
and manufacturability.
Key Attributes
• Technical expertise: Strong knowledge of wide bandgap semiconductor materials and power MOSFET device physics, with the ability to design, simulate, and optimize SiC devices.
• Innovation mindset: Ability to develop new device architectures and support the introduction of novel fabrication concepts.
• Analytical skills: Experience in electrical characterization, data analysis, and technical reporting.
• Problem-solving: Ability to identify technical issues, support root cause analysis, and contribute to effective corrective actions.
• Continuous learning: Commitment to monitoring scientific literature, patents, and industry trends to identify new opportunities and maintain technical excellence.
Principal Accountabilities
Major Activities
Expected End-Results
Develop SiC device projects from feasibility to industrialization, in collaboration with intern
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