Internship - Intrinsic Capacitance Measurement Of Power Mosfets/Igbts Using S?Parameters

19 ott - Italia
STMicroelectronics Italia

OUR STORY
At STMicroelectronics, we believe in the power of technology to drive innovation and make a positive impact on people, businesses, and society.
As a global semiconductor company, our advanced technologies and chips form the hidden foundation of the world we live in today.
When you join ST, you will be part of a global business with more than 115 nationalities, present in 40 countries, and comprising over 50,000 diverse and dedicated creators and makers of technology around the world.
Developing technologies takes more than talent: it takes amazing people who understand collaboration and respect.
People with passion and the desire to disrupt the status quo, drive innovation, and unlock their own potential.
Embark on a journey with us, where you can innovate for a future that we want to make smarter and greener, in a responsible and sustainable way.
Our technology starts with you.
You will support test improvement activities related to the
OUR STORY
At STMicroelectronics, we believe in the power of technology to drive innovation and make a positive impact on people,



businesses, and society.
As a global semiconductor company, our advanced technologies and chips form the hidden foundation of the world we live in today.
When you join ST, you will be part of a global business with more than 115 nationalities, present in 40 countries, and comprising over 50,000 diverse and dedicated creators and makers of technology around the world.
Developing technologies takes more than talent: it takes amazing people who understand collaboration and respect.
People with passion and the desire to disrupt the status quo, drive innovation, and unlock their own potential.
Embark on a journey with us, where you can innovate for a future that we want to make smarter and greener, in a responsible and sustainable way.
Our technology starts with you.
You will support test improvement activities related to the high?frequency characterization of power MOSFETs and IGBTs.
The objective is

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