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Power gan technology device engineer

Pubblicato il 24-10-2026 - Stmicroelectronics in Catania

Your roleyou will focus on data analysis, parametric testing, wafer-level characterization and device-physics understanding of gan power technology platforms, including tegs (test element groups).key responsibilitiesperform data analysis and statistical evaluation of parametric test, teg and wafer-level characterization results.support planning and execution of electrical characterization and parametric testing activities for gan power technologies.analyze measurement data to identify trends, variability, anomalies, failure mechanisms and opportunities for process and device performance improvement.correlate electrical results with device architecture, process integration and physical mechanisms governing gan device operation.investigate key device parameters such as threshold voltage, dynamic rds-on, leakage currents, breakdown voltage, current collapse, trapping effects and switching-related figures of merit.provide insights into device performance variability, robustness and reliability through characterization data analysis.collaborate with r&d; and manufacturing teams to identify root causes and drive corrective actions.prepare clear technical reports and communicate findings to stakeholders across r&d; and operations.apply statistical methods and data-visualisation techniques using jmp, excel,



python and other data-analysis tools.contribute to the definition and optimisation of characterization methodologies, test structures and monitoring strategies for gan technologies.your skills & experiencestrong knowledge of data analysis, statistical methods and experimental data interpretation.experience with semiconductor electrical characterization and parametric testing.understanding of power gan device physics (hemt operation, polarization effects, 2deg formation, trapping phenomena, current collapse, dynamic rds-on, breakdown mechanisms, leakage behavior).ability to correlate electrical performance with device design, process integration and material characteristics.knowledge of semiconductor fabrication processes and process integration schemes.familiarity with reliability and robustness aspects of power semiconductor devices.good data manipulation and visualisation skills; experience with jmp, excel and basic to intermediate python.strong problem-solving skills with a root-cause analysis mindset.effective communication and collaboration in cross-functional r&d; and manufacturing environments.business proficiency in english.compensationgross annual salary ral €38,000 - €45,000 plus variable pay, in accordance with the eu pay transparency directive and applicable italian legislation.

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